RN1101MFV,L3F

Overview

The RN1101MFV,L3F is a silicon NPN epitaxial type digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with built-in bias resistors (R1=4.7 kΩ, R2=4.7 kΩ) in a VESM-3 surface-mount package. Key electrical ratings include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 150 mW. The device features a minimum DC current gain (hFE) of 30 at IC=10 mA and operates within a junction temperature range up to 150°C.

Feature Summary

• Integrates bias resistors into the transistor structure to reduce component count and assembly costs
• Ultra-small VESM-3 package designed for high-density mounting applications
• Complementary configuration available with PNP types in the RN2101MFV to RN2106MFV series

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix L3F against official Toshiba documentation to confirm reel packaging specifications. Ensure compliance with RoHS directives and check for any Not Recommended for New Design (NRND) status updates prior to procurement decisions.

Selection Notes

Select this model when a 1:1 resistor ratio is required for general-purpose switching. Compare hFE requirements against other variants like RN1102MFV if higher gain is needed. Verify input voltage thresholds match the target logic levels for the intended interface application.

Part Context

This component belongs to the RN1101MFV through RN1106MFV family of digital transistors. All members share identical physical dimensions and electrical characteristics except for the internal bias resistor values and corresponding emitter cutoff currents.

Replacement Considerations

Direct substitutes within the same family include RN1102MFV, RN1103MFV, RN1104MFV, RN1105MFV, and RN1106MFV. These parts maintain pin compatibility but differ in resistor ratios.