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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1101MFV,L3F(CT is a single NPN Bias Resistor Built-in Transistor (Digital Transistor) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with internal bias resistors in a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a collector-emitter maximum voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation (Pd) of 150 mW. The device features a typical base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. It offers a minimum DC current gain (hFE) of 120 and operates at a maximum junction temperature of +150°C. The component is AEC-Q101 qualified for automotive applications.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to simplify circuit design and reduce component count.
- AEC-Q101 qualified for high reliability in automotive electronic systems.
- Compact SOT-723 (VESM) surface-mount package facilitates space-constrained PCB layouts.
Applications
- Automotive logic level switching and signal processing circuits.
- General-purpose digital switching in consumer electronics.
- Interface circuits between microcontrollers and peripheral devices.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pin configuration and packaging type. Ensure the procurement channel provides valid traceability documentation for AEC-Q101 qualified components intended for automotive use. Confirm RoHS compliance status through the latest product release notes before finalizing orders.
Selection Notes
Select this component when a single NPN digital transistor with equal 4.7kΩ bias resistors is required. Compare hFE minimum values and VCEO ratings against system requirements. Consider the SOT-723 package dimensions for thermal management and board space constraints relative to alternative packages like SC-88 or UMT-3.
Part Context
This part belongs to the RN11xx series of Bias Resistor Built-in Transistors from Toshiba. The series includes variants with different resistor ratios (e.g., RN1104 with 47kΩ/47kΩ). The 'L3F' suffix typically indicates lead-free and halogen-free compliance, while '(CT)' denotes Cut Tape packaging. This family is designed to replace discrete resistor-transistor combinations.
Replacement Considerations
Direct substitutes within the same Toshiba RN110x series include RN1102MFV, RN1103MFV, and RN1104MFV, which share the same package and electrical characteristics but differ in internal resistor values. Verify resistor ratios match the original circuit design before substitution.
