RN1101MFV,L3XHF(CT

Overview

The RN1101MFV,L3XHF(CT is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN bipolar junction transistor with internal bias resistors in a VESM surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA, with a maximum power dissipation of 150 mW. The built-in resistor network consists of a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. This configuration simplifies circuit design by reducing component count and board space while ensuring stable switching performance.

Feature Summary

• Integrates NPN transistor with dual bias resistors to minimize external components
• Optimized for high-speed switching applications through reduced parasitic effects
• Provides consistent DC current gain characteristics across operating temperatures

Applications

• General-purpose logic level shifting and interface circuits
• Driver stages for small-signal relay or LED control
• Switching elements in portable battery-powered devices

Procurement Notes

Verify the specific suffix L3XHF(CT against official Toshiba documentation to confirm tape-and-reel packaging specifications and moisture sensitivity levels. Ensure compatibility with automated pick-and-place equipment requirements. Cross-reference the part number with authorized distributors to confirm RoHS compliance status and availability of updated datasheets prior to final procurement decisions.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. The 4.7 kΩ/4.7 kΩ resistor ratio suits standard TTL and CMOS logic interfaces. Consider the VESM package dimensions for PCB layout constraints. Verify that the 100 mA collector current meets load requirements and that the 150 mW power dissipation allows adequate thermal headroom in the intended enclosure environment.

Part Context

This part belongs to Toshiba’s RN11xx series of Bias Resistor Built-In Transistors (BRTs). These devices are designed to replace discrete transistor-resistor networks, offering improved reliability and reduced assembly costs. The RN1101 variant specifically provides a 1:1 resistance ratio, distinguishing it from other ratios in the family such as the RN1104 or RN1106.

Replacement Considerations

Publicly confirmed substitutes include RN1101MFV,L3F and RN1101MFV,L3Q. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the replacement part maintains the same VESM package outline and thermal characteristics.