RN1102ACT(TPL3)

RN1102ACT(TPL3)

$0.29
  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-

SKU:1d153727bb6c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN1102ACT(TPL3)

Overview

The RN1102ACT(TPL3) is a silicon NPN epitaxial planar digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with an internal bias resistor network configured in a voltage-divider arrangement. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The typical DC current gain (hFE) is specified at a minimum of 50. The component utilizes the TPL3 surface-mount package, which is a small outline form factor suitable for high-density mounting on printed circuit boards.

Feature Summary

  • Integrates a bias resistor network directly into the transistor structure to reduce external component count and assembly costs.
  • Utilizes a voltage-divider configuration for stable biasing in switching and interface applications.
  • Employes a silicon epitaxial planar process technology for reliable performance.
  • Designed in a compact surface-mount package to facilitate automated placement and high-density board layouts.

Applications

  • Switching circuits requiring fast response times.
  • Inverter logic circuits for signal inversion.
  • Interface circuits connecting different voltage domains or logic families.
  • Driver circuits for low-power loads or relay coils.

Procurement Notes

Verify the specific suffix 'TPL3' against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging quantity and pin assignment. Ensure the ordering code matches the required bias resistor ratio, as variations exist within the RN1102 series. Cross-reference the RoHS compliance status and lead time requirements with authorized distributors prior to procurement.

Selection Notes

Select this component when a compact NPN digital transistor with a built-in voltage-divider bias resistor is required. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the circuit demands. Confirm that the internal resistor values align with the desired base drive characteristics for the specific application load.

Part Context

The RN1102 belongs to Toshiba's broader family of digital transistors, which combine bipolar junction transistors with integrated passive components. This series simplifies circuit design by replacing discrete resistors with monolithic solutions. The ACT designation typically indicates automotive-grade qualification or specific reliability standards, while TPL3 defines the physical package dimensions and terminal configuration.

Replacement Considerations

Compatible substitutes include other NPN digital transistors with similar voltage ratings and integrated bias networks. Check equivalent part numbers from manufacturers such as ROHM, ON Semiconductor, or Panasonic. Ensure the replacement device matches the pinout and thermal characteristics of the TPL3 package to maintain PCB compatibility.

RN1102ACT(TPL3)RN1102ACT(TPL3)
$0.29
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