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The RN1102,LF(CT is an NPN silicon epitaxial planar digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bias resistor (R1) with a value of 10 kΩ into the base terminal, configured as a pre-biased device. The component operates with a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at Ic=1mA and Vce=5V, and a transition frequency (fT) of 250 MHz. The package is SSM (SC-75/SOT-416), designed for surface mount applications.
Verify the ordering suffix LF(CTTR-ND or similar against the manufacturer's official datasheet to confirm the specific tape-and-reel packaging configuration. Ensure the part number matches the exact resistance ratio and polarity requirements for the target application design.
Select this component when a compact NPN pre-biased transistor with a 10 kΩ base resistor is required. Compare hFE and fT specifications against load requirements. Verify that the SSM package dimensions fit the available footprint on the printed circuit board layout.
This part belongs to the RN11xx series of NPN digital transistors from Toshiba. These devices are designed to replace discrete BJT and resistor combinations, offering space savings and improved reliability in small signal switching applications.
Cross-reference with other NPN pre-biased transistors featuring a 10 kΩ base resistor and compatible Vceo/Ic ratings. Verify pinout compatibility and thermal performance before substitution.