RN1102,LXHF(CT

RN1102,LXHF(CT

$0.25
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:e5d5fe3f99f4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1102,LXHF(CT

Overview

The RN1102,LXHF(CT is a pre-biased NPN silicon transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with a built-in bias resistor network configured at a ratio of 1:1. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a maximum continuous collector current (IC) of 100 mA. The minimum DC current gain (hFE) is specified as 50. The component is housed in an ES-6 surface-mount package.

Feature Summary

  • Integrates a bias resistor network directly into the transistor structure to reduce external component count.
  • Utilizes an ultra-small ES-6 surface-mount package suitable for high-density mounting.
  • Designed to lower assembly costs and enable compact equipment manufacturing.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix LXHF(CT against official Toshiba documentation to confirm packaging details such as reel size or tape width. Ensure the requested part matches the exact manufacturer designation to avoid confusion with similar pre-biased transistor variants that may share the base model number but differ in internal resistance values or package types.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. The 50 V rating and 100 mA current capacity define the operational limits. The built-in resistor ratio simplifies base drive design compared to discrete transistors. Confirm that the thermal dissipation capabilities of the small outline package meet the specific application's power requirements.

Part Context

This part belongs to the RN11xx series of digital transistors from Toshiba. These devices are engineered to replace multiple discrete components, including the transistor and its associated base resistors, into a single surface-mount unit. This integration supports the trend toward miniaturization in modern electronic assemblies.

Replacement Considerations

Compatible substitutes within the same family include RN1101, RN1103, RN1104, RN1105, and RN1106. Selection among these alternatives depends on the required bias resistor values. Verify that any replacement maintains the same NPN polarity, voltage/current ratings, and compatible package footprint.

RN1102,LXHF(CTRN1102,LXHF(CT
$0.25
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