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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1102MFV,L3F is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN silicon transistor integrated with a built-in bias resistor network in a compact SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. It includes a base resistor typically rated at 4.7 kOhms and offers a minimum DC current gain (hFE) of 120. Designed for general-purpose switching applications, it operates within a temperature range up to +150°C.
Feature Summary
- Integrates an NPN bipolar junction transistor with a single built-in bias resistor to simplify circuit design.
- Provides high-density mounting through the compact SOT-723 surface-mount package format.
- Ensures stable switching performance with a guaranteed minimum DC current gain specification.
Applications
- General-purpose digital switching circuits
- Interface circuits between logic gates and loads
- Driver stages for small-signal applications
Procurement Notes
Verify the specific suffix L3F against official Toshiba documentation to confirm reel packaging quantities and tape specifications. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a single NPN BRT configuration with a fixed 4.7 kOhm base resistor is required. Compare the 150 mW power dissipation limit against thermal constraints in the final enclosure. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the application circuit.
Part Context
This component belongs to the RN11xx series of Bias Resistor Built-in Transistors from Toshiba. These devices replace discrete resistor-transistor networks, reducing board space and assembly costs. The MFV suffix indicates the SOT-723 package type, which is standard for high-density surface-mount designs requiring minimal footprint area.
Replacement Considerations
The complementary PNP equivalent is the RN2102MFV,L3F. Designers requiring different resistance ratios should consult other members of the RN11xx series. Verify pinout compatibility if substituting with similar BRTs from other manufacturers.
