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The RN1102MFV,L3XHF is a digital transistor manufactured by Toshiba Semiconductor and Storage. It consists of a single NPN silicon transistor integrated with built-in bias resistors in an SOT-723 (SC-88A) surface-mount package. The device features a collector-emitter maximum voltage (VCEO) of 50 V and a continuous collector current (IC) rating of 100 mA. The typical input resistance is 4.7 kΩ, and the minimum DC current gain (hFE) is specified at 120. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify the specific suffix L3XHF against official Toshiba documentation to confirm packaging details such as reel size or tape width. Ensure the ordering code matches the required quantity format. Cross-reference the part number with authorized distributors to confirm availability and authenticity. Check for any RoHS compliance markings if environmental regulations apply to the end product.
Select this component when a compact NPN digital transistor with a 4.7 kΩ base resistor is required. The 50 V VCEO rating suits low-voltage logic interfacing. Consider the SOT-723 package dimensions for PCB layout constraints. Compare hFE specifications against load requirements to ensure adequate drive capability in the target application environment.
This part belongs to Toshiba's RN series of digital transistors, which integrate bias resistors directly onto the die. The MFV designation indicates the SOT-723 package type. The L3XHF suffix typically denotes specific packaging configurations, such as cut tape or reel quantities, distinct from the core electrical characteristics defined by the RN1102MFV base model.
Compatible substitutes include other NPN digital transistors with similar 50 V ratings and 4.7 kΩ input resistance, such as the RN1102MFV without the specific suffix or equivalents from other manufacturers like ROHM or ON Semiconductor, provided pinouts and thermal limits match.