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The RN1102T5LFT is a bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN silicon epitaxial structure with integrated base resistors R1 and R2, both rated at 10 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 50 at IC = 10 mA and VCE = 5 V, and a transition frequency (fT) of 250 MHz. It is housed in a compact SOT-416 package.
Verify the specific ordering suffix against official distributor catalogs to confirm packaging format and reel specifications. Ensure compatibility with automated pick-and-place equipment regarding the SOT-416 footprint dimensions. Cross-reference the manufacturer part number with local regulatory compliance requirements before finalizing procurement orders.
Select this component when a fixed 1:1 bias resistor ratio is required for NPN switching applications. Verify that the 100 mA collector current rating meets the load requirements. Confirm that the 50 V breakdown voltage provides sufficient margin for the intended supply voltage. Compare input resistance values against other BRT series options if different drive currents are needed.
This component belongs to the RN1101 through RN1106 series of general-purpose digital transistors. The series offers various combinations of internal resistor values to accommodate different logic levels and drive strengths. The RN1102 specifically provides equal value resistors for balanced biasing in standard interface applications.
Complementary PNP equivalent is the RN2102. Other series members like RN1101 or RN1103 offer different resistor ratios but share similar electrical ratings and pin configurations.