RN1103ACT(TPL3)

RN1103ACT(TPL3)

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-

SKU:f972e3cd454d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN1103ACT(TPL3)

Overview

The RN1103ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN silicon transistor with an internal bias resistor network in a compact surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. It includes a built-in bias resistor ratio of 1:2, facilitating simplified circuit design by reducing the component count typically required for discrete transistor biasing. The unit operates within a temperature range suitable for general electronic applications.

Feature Summary

  • Integrates an NPN bipolar junction transistor with a dual-resistor bias network to minimize external component requirements.
  • Provides consistent DC current gain characteristics due to the monolithic integration of the transistor and resistors.
  • Designed for low-power switching applications where space constraints limit the use of discrete components.

Applications

  • Switching circuits for logic interface level translation
  • Driver stages for small-signal loads in consumer electronics
  • Inverter circuits requiring minimal board space

Procurement Notes

Verify the specific suffix TPL3 against the official Toshiba datasheet to confirm packaging type and tape-and-reel specifications. Ensure the ordering part number matches the exact electrical parameters required for the target application, as suffix variations may indicate different packaging or handling characteristics without altering the core semiconductor function.

Selection Notes

Select this component when a single NPN switch with a fixed 1:2 bias resistor ratio is required. Confirm that the 50 V collector-emitter voltage and 100 mA current limits exceed the maximum operational stresses of the intended load. Verify that the SOT-323 package dimensions fit the available footprint on the printed circuit board.

Part Context

This device belongs to the RN series of Bias Resistor Built-in Transistors from Toshiba. The RN series is engineered to replace multiple discrete components, thereby reducing assembly costs and improving reliability in high-volume consumer and industrial electronics. The ACT designation typically refers to the specific pin configuration and internal resistor values within this product family.

Replacement Considerations

Consult official Toshiba cross-reference documentation for verified equivalent parts. Generic substitutes must match the NPN polarity, 50 V Vceo, 100 mA Ic, and the specific 1:2 internal resistor ratio to ensure functional compatibility in existing designs.

RN1103ACT(TPL3)RN1103ACT(TPL3)

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