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The RN1103ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN silicon transistor with an internal bias resistor network in a compact surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. It includes a built-in bias resistor ratio of 1:2, facilitating simplified circuit design by reducing the component count typically required for discrete transistor biasing. The unit operates within a temperature range suitable for general electronic applications.
Verify the specific suffix TPL3 against the official Toshiba datasheet to confirm packaging type and tape-and-reel specifications. Ensure the ordering part number matches the exact electrical parameters required for the target application, as suffix variations may indicate different packaging or handling characteristics without altering the core semiconductor function.
Select this component when a single NPN switch with a fixed 1:2 bias resistor ratio is required. Confirm that the 50 V collector-emitter voltage and 100 mA current limits exceed the maximum operational stresses of the intended load. Verify that the SOT-323 package dimensions fit the available footprint on the printed circuit board.
This device belongs to the RN series of Bias Resistor Built-in Transistors from Toshiba. The RN series is engineered to replace multiple discrete components, thereby reducing assembly costs and improving reliability in high-volume consumer and industrial electronics. The ACT designation typically refers to the specific pin configuration and internal resistor values within this product family.
Consult official Toshiba cross-reference documentation for verified equivalent parts. Generic substitutes must match the NPN polarity, 50 V Vceo, 100 mA Ic, and the specific 1:2 internal resistor ratio to ensure functional compatibility in existing designs.