RN1103,LF(CT

Overview

The RN1103,LF(CT is a silicon NPN epitaxial pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with two built-in bias resistors (R1=22 kΩ, R2=22 kΩ) in a compact SOT-416 package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC=10 mA and VCE=5 V, a transition frequency (fT) of 250 MHz, and a maximum collector power dissipation of 100 mW.

Feature Summary

• Integrates an NPN transistor with dual bias resistors to reduce component count
• Simplifies circuit design for switching and driver applications
• Provides complementary functionality within the RN2101 to RN2106 series

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format and compliance status. Confirm that the LF designation aligns with required environmental standards such as RoHS before finalizing procurement specifications.

Selection Notes

Select this component when a compact NPN solution with fixed 22kΩ bias resistors is required. Ensure the 100 mA current rating and 50 V breakdown voltage meet the system requirements. Verify thermal derating guidelines for the target operating temperature range.

Part Context

This part belongs to the RN1101 to RN1106 family of pre-biased transistors. These devices are designed to replace discrete resistor-transistor networks, offering space savings on printed circuit boards while maintaining consistent biasing characteristics across production batches.

Replacement Considerations

Direct substitutes include other RN1103 variants from different manufacturers or pin-compatible equivalents with identical 22kΩ/22kΩ resistor ratios and matching electrical ratings.