RN1103,LXHF(CT

Overview

The RN1103,LXHF(CT is a single NPN pre-biased bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates base resistor R1 and emitter resistor R2 within an SSM-3 (SOT-416) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, continuous collector current (IC) of 100 mA, and power dissipation (Pd) of 100 mW. The device features typical input resistors of 22 kOhms for both base and emitter configurations. It supports a transition frequency of 250 MHz and operates at temperatures up to +150°C. The component is AEC-Q200 qualified for automotive applications.

Feature Summary

• Integrates biasing resistors to simplify circuit design and reduce component count
• AEC-Q200 qualified for reliable operation in automotive environments
• High switching speed with a transition frequency of 250 MHz
• Compact SSM-3 surface-mount packaging for space-constrained designs

Applications

• Automotive electronic control units requiring robust switching components
• General-purpose signal or power switching circuits
• Interface driving applications in consumer electronics
• Battery management systems in electric vehicles

Procurement Notes

Verify the specific suffix LXHF(CT against the official Toshiba datasheet to confirm compliance with RoHS3 standards and automotive qualification requirements. Ensure that the ordering quantity matches the available reel or cut tape options provided by authorized distributors. Cross-reference the manufacturer part number with the Mouser catalog identifier 757-RN1103LXHFCT to guarantee authenticity and traceability during procurement.

Selection Notes

Select this component when a single NPN pre-biased transistor with 50 V rating and 100 mA current capacity is required. The integrated 22 kOhm resistors are suitable for standard logic interface applications. Consider the SSM-3 package dimensions for PCB layout constraints. Verify thermal management needs given the 100 mW power dissipation limit and ensure the operating temperature range aligns with the +150°C maximum specification.

Part Context

This part belongs to the RN110x series of Bias Resistor Built-in Transistors (BRT) from Toshiba. These devices combine transistors with internal resistors to replace discrete networks. The RN1103 specifically denotes an NPN configuration with 22 kOhm/22 kOhm resistors. This series is widely used in automotive and industrial applications where reliability and simplified assembly are prioritized over discrete component flexibility.

Replacement Considerations

Direct substitutes include RN1103,LF(CT and RN1103MFV(TPL3). Both maintain the same NPN polarity, 50 V rating, 100 mA current, and 22 kOhm resistor values. Verify package compatibility as LF(CT uses SSM-3 while MFV may differ. Confirm automotive qualification status if the application requires AEC-Q200 compliance.