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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1103MFV,L3F is a bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN silicon epitaxial planar structure housed in a compact SOT-723 (VESM) surface-mount package. The device integrates a single internal resistor network with a base resistance (R1) of 47 kOhms. Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a total power dissipation of 150 mW. The component meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates a single bias resistor to simplify circuit design and reduce board space.
- Automotive-grade reliability certified under the AEC-Q101 standard.
- Utilizes a compact SOT-723 surface-mount package for high-density mounting.
Applications
- Switching applications in automotive electronic control units.
- Driver circuits for low-power loads in consumer electronics.
- Logic level shifting and interface buffering in digital systems.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the AEC-Q101 qualification status aligns with project requirements. Request the latest reliability test reports and RoHS compliance documentation directly from authorized distributors or Toshiba Semiconductor and Storage before finalizing procurement orders.
Selection Notes
Select this component when a pre-biased NPN transistor with a 47 kOhm input resistance is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Verify that the 150 mW power dissipation limit accommodates the thermal conditions of the target PCB layout. Consider the SOT-723 footprint dimensions during the mechanical design phase.
Part Context
This part belongs to the RN11xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor combinations, offering space savings and improved switching consistency. The RN1103 variant specifically provides a 47 kOhm base resistor, distinguishing it from other series members with different resistance ratios.
Replacement Considerations
Consult the official Toshiba complementary product list for direct equivalents. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substituting with components from other manufacturers.
