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The RN1103MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP silicon transistor with built-in bias resistors in a compact surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The minimum DC current gain (hFE) is specified at 70. The typical resistor ratio is 1, with R1 and R2 values of 22 kΩ and 47 kΩ respectively. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 150 mW.
Verify the exact suffix L3XHF(CT against official Toshiba documentation to confirm tape-and-reel specifications and moisture sensitivity level. Ensure the ordering code matches the required quantity per reel. Cross-reference the date code and marking on received components with the latest datasheet revision to guarantee authenticity and compliance with RoHS directives.
Select this component when a PNP configuration with a 22k/47k resistor ratio is required. The 50V VCEO rating suits low-voltage logic systems. Consider the 150mW power dissipation limit during thermal analysis. Compare against other RN11xx series variants if different resistor ratios or NPN polarity are needed for the specific application requirements.
This part belongs to the Toshiba RN11xx series of digital transistors. These devices combine bipolar transistors with internal bias networks to reduce external component count. The MFV package denotes a specific small-outline surface-mount form factor. The series is designed for high-density PCB layouts in consumer and industrial electronics.
Direct substitutes include other RN1103 variants from Toshiba such as RN1103MFV without the reel suffix. Cross-brand equivalents require matching PNP polarity, 50V VCEO, 100mA IC, and identical 22k/47k resistor ratios.