RN1104ACT(TPL3)

Overview

The RN1104ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN epitaxial planar silicon transistor with built-in bias resistors in an ultra-small SC-70 (SOT-323) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a DC current gain (hFE) of at least 50 at 10 mA and 5 V. The device features internal base resistor R1 and emitter-base resistor R2 values of 47 kOhms each. It operates with a maximum power dissipation of 100 mW and has a transition frequency of 200 MHz.

Feature Summary

• Integrates a PNP transistor with dual bias resistors to reduce component count and simplify circuit design.
• Utilizes an ultra-small SC-70 package suitable for high-density mounting applications.
• Provides complementary functionality within the RN2xxx series family.

Applications

• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm tape-and-reel specifications and exact marking codes. Ensure compatibility with standard SC-70 footprint designs during procurement planning.

Selection Notes

Select this component when a PNP digital transistor with 47k/47k bias resistors is required in an SC-70 package. Compare hFE and saturation voltage requirements against alternative models like RN1104MFV if different packaging or resistor ratios are needed.

Part Context

This part belongs to the Toshiba RN11xx series of pre-biased transistors. These devices are designed as direct replacements for discrete resistor-transistor networks, offering space savings and assembly cost reductions in compact electronic equipment.

Replacement Considerations

The RN1104MFV is a documented complementary model within the same series. Verify pinout compatibility and package dimensions before substitution.