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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1104,LF(CT is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates internal base resistor R1 (47 kOhms) and emitter resistor R2 (47 kOhms) within a VESM (SOT-723) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA/5V, a maximum saturation voltage of 300mV at 500µA/5mA, and a transition frequency of 150MHz. Maximum power dissipation is rated at 150mW.
Feature Summary
- Integrates dual resistors (R1 and R2) to simplify circuit design and reduce component count.
- Optimized for high-speed switching applications with specified transition frequency.
- Low saturation voltage ensures efficient performance in digital logic interfaces.
Applications
- Digital logic level shifting and interface circuits
- Switching applications in portable electronic devices
- Driver stages for small-signal loads
Procurement Notes
Verify the complete ordering part number, including suffixes such as TR, CT, or DKR, against the manufacturer's official documentation to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the specific revision history to avoid obsolete variants.
Selection Notes
Select this component when a single NPN pre-biased transistor with integrated base and emitter resistors is required. Ensure the 50V voltage rating and 100mA current capacity meet the circuit demands. Verify that the SOT-723 package dimensions fit the PCB layout constraints and that the 150MHz frequency response is sufficient for the target application speed.
Part Context
This component belongs to Toshiba's RN11xx series of digital transistors, which are designed to replace discrete BJT and resistor combinations. The RN1104 variant specifically provides an NPN configuration with equal 47kOhm base and emitter resistances, offering a standardized solution for general-purpose switching tasks in compact consumer electronics.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided source material. Consult manufacturer cross-reference guides for equivalent single NPN pre-biased transistors with similar resistance values and package types.
