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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1104,LXHF(CT is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It features an integrated bias resistor network within a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 100mA. The device incorporates a base resistor (R1) of 47 kΩ and an emitter-base resistor (R2) of 47 kΩ. It exhibits a minimum DC current gain (hFE) of 80 at Ic=10mA and Vce=5V, with a maximum saturation voltage (VCEsat) of 300mV at Ib=500µA and Ic=5mA. The component is rated for a maximum power dissipation of 150mW and operates up to a junction temperature of +150°C.
Feature Summary
- Integrates dual bias resistors (base and emitter-base) to reduce external component count and simplify circuit design.
- Utilizes ultra-small packaging technology suitable for high-density mounting applications.
- Designed for automotive reliability with AEC-Q101 qualification.
Applications
- Switching circuits requiring compact form factors.
- Inverter circuits in consumer electronics.
- Interface circuits for signal level translation.
- Driver circuits for low-power loads.
Procurement Notes
Verify the specific suffix LXHF against the manufacturer's latest datasheet to confirm RoHS compliance and lead-free status. Ensure the ES6 or equivalent package designation matches the PCB footprint requirements. Confirm AEC-Q101 automotive grade certification if the application demands automotive reliability standards. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a single NPN digital transistor with 47kΩ base and emitter-base resistors is required. Compare the 150mW power dissipation rating against the thermal constraints of the target application. Consider the 50V voltage rating relative to the system supply voltage. Evaluate the SOT-723 or similar small outline package dimensions against available board space.
Part Context
This part belongs to the RN11xx series of NPN pre-biased transistors from Toshiba. It is functionally complementary to the RN21xx series of PNP devices. The series is designed to replace discrete transistor-resistor combinations, offering space savings and improved assembly yield. It shares architectural similarities with other members like RN1101 through RN1106, differing primarily in internal resistor values.
Replacement Considerations
Potential substitutes include RN1104,LF(CT or RN1104MFV,L3F from the same manufacturer family. Verify pinout compatibility and electrical parameter equivalence before substitution. No cross-manufacturer equivalents are confirmed in the provided data.
