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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1104MFV,L3F is a Silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 150 mW. The device features an internal base resistor (R1) of 47 kΩ and an emitter-base resistor (R2) of 47 kΩ. It has a minimum DC current gain (hFE) of 80 at IC=10mA and VCE=5V, with a maximum collector cutoff current of 500 nA.
Feature Summary
- Incorporates built-in bias resistors to reduce component count and assembly costs.
- Utilizes an ultra-small SOT-723 package suitable for high-density mounting.
- Designed for switching, inverter, interface, and driver circuits.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status directly with the manufacturer or authorized suppliers prior to procurement. Review the latest Toshiba Semiconductor Reliability Handbook for derating guidelines and application precautions before finalizing orders.
Selection Notes
Select this component when a compact NPN digital transistor with a 1:1 resistor ratio is required. Ensure the 50 V collector-emitter voltage and 100 mA current ratings align with the target circuit requirements. Verify that the integrated 47 kΩ input resistance meets the drive source specifications for the intended switching or logic interface application.
Part Context
This part belongs to the RN110xMFV series of bias resistor built-in transistors. It serves as the NPN counterpart to the RN210xMFV PNP series. The device is designed to replace discrete transistor and resistor combinations, offering a space-saving solution for general-purpose small signal applications in modern electronic equipment.
Replacement Considerations
Direct complementary replacements within the same family include the RN2104MFV. Cross-family substitutions require matching the NPN polarity, SOT-723 package, and similar electrical characteristics such as VCEO, IC, and resistor values.
