RN1104MFV,L3F(CT

Overview

The RN1104MFV,L3F(CT is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal resistors R1 (47 kOhms) and R2 (47 kOhms) within an SOT-723 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions.

Feature Summary

• Integrates dual bias resistors to simplify circuit design and reduce component count
• Automotive qualified under AEC-Q101 standards for reliability
• Optimized for low-voltage operation with defined saturation characteristics

Applications

• Switching applications in automotive electronic control units
• Driver circuits for small-signal loads in industrial equipment
• Logic level translation and buffer stages in embedded systems

Procurement Notes

Verify the specific suffix designation during acquisition to ensure compatibility with required packaging formats such as cut tape or reel configurations. Confirm that the procurement source provides authentic Toshiba Semiconductor and Storage products with appropriate traceability documentation to meet quality assurance requirements for sensitive deployments.

Selection Notes

Select this component when a single NPN digital transistor with equal base and emitter bias resistors is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current threshold. Consider the SOT-723 footprint constraints and thermal management needs relative to the 150 mW power dissipation capability.

Part Context

This part belongs to the RN11xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete resistor-transistor combinations, offering space savings and improved consistency in switching performance. The series supports various resistance ratios for different logic interface requirements.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50 V VCEO rating, 100 mA Ic limit, and SOT-723 package. Verify equivalent internal resistor values (R1/R2 = 47k/47k) and hFE characteristics to maintain circuit functionality without redesign.