RN1104MFV,L3XHF(CT

Overview

The RN1104MFV,L3XHF(CT is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values are specified as 47 kOhms for both the base (R1) and emitter (R2). The DC current gain (hFE) is a minimum of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV at 500 µA base current and 5 mA collector current. Power dissipation is rated at 150 mW. The component is housed in a surface-mount SOT-723 package.

Feature Summary

• Integrates dual bias resistors to reduce external component count and PCB space
• Optimized for switching applications with low saturation voltage characteristics
• Available in compact surface-mount packaging for automated assembly

Applications

• Switching circuits in consumer electronics
• Interface driver stages for logic level translation
• General-purpose small signal amplification

Procurement Notes

Verify the specific suffix L3XHF against official Toshiba documentation to confirm exact tape-and-reel specifications and moisture sensitivity level. Ensure compatibility with standard SMT reflow profiles. Cross-reference the full part number with authorized distributors to distinguish between cut tape and reel variants. Confirm RoHS compliance status for the specific manufacturing batch prior to integration into regulated assemblies.

Selection Notes

Select this component when a single NPN transistor with fixed 47k/47k bias resistors is required. Verify that the 50 V breakdown voltage and 100 mA current limits meet the load requirements. Consider the SOT-723 footprint constraints during layout. Compare hFE and Vce(sat) specifications against alternative digital transistors if higher gain or lower saturation is needed for the specific application.

Part Context

This part belongs to the RN11xx series of bias resistor built-in transistors from Toshiba. The series offers various resistor ratios and polarities. The RN1104 variant specifically provides equal base and emitter resistors. It is designed to replace discrete BJT and resistor networks in modern compact electronic designs.

Replacement Considerations

Check for direct substitutes within the RN110x series with identical resistor values. Verify pinout compatibility with SOT-723 packages from other manufacturers. Ensure equivalent electrical parameters such as Vceo, Ic, and hFE are met before substitution.