SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1104T5LFT is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It belongs to the RN1101-RN1106 series of bias resistor built-in transistors (BRT). The device integrates an internal bias network with R1 = 47 kΩ and R2 = 47 kΩ, providing a fixed resistor ratio of 1. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a power dissipation (PC) of 100 mW at 25°C ambient temperature.
Verify the specific ordering suffix 'T5LFT' against official Toshiba documentation to confirm reel quantity and tape specifications. Ensure compliance with RoHS directives and verify that the intended application does not fall under restricted categories such as automotive or medical systems without explicit qualification confirmation.
Select this component when a fixed 1:1 bias resistor ratio is required for NPN logic interfacing. Verify that the 47 kΩ input resistance aligns with the driving source impedance. Confirm that the 100 mA collector current rating meets the load requirements and that the 100 mW power dissipation limit accommodates the thermal conditions of the target PCB layout.
This part is part of the RN1101 through RN1106 family of general-purpose BRTs. These devices are designed to replace discrete transistor-resistor networks, reducing board space and assembly time. The RN1104 specifically provides equal value bias resistors, distinguishing it from other members of the series like the RN1105 which features unequal ratios.
Consult the official Toshiba replacement guide for cross-reference data. Verify pinout compatibility and electrical parameter equivalence before substituting with alternative manufacturers' BRTs.