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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.08A CST3
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：80 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：CST3
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Overview
The RN1105ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN silicon epitaxial planar transistor with two internal bias resistors in a single surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Internal resistor values are typically 47 kΩ for R1 and 10 kΩ for R2, providing a fixed bias ratio. The component utilizes the SSM (SC-75/SOT-416) miniature package to facilitate automated assembly and reduce printed circuit board area.
Feature Summary
- Integrates NPN transistor with dual bias resistors to simplify circuit design
- Eliminates external resistor components to minimize footprint
- Designed for high-speed switching applications with low saturation voltage
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Inverter circuits in consumer electronics
Procurement Notes
Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm tape-and-reel packaging and material composition. Ensure compatibility with standard surface-mount reflow profiles. Cross-reference the exact part number with authorized distributors to confirm current production status and availability constraints prior to procurement planning.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads. Confirm that the internal resistor ratio matches the required base drive characteristics for the target application logic levels.
Part Context
This component belongs to the RN11xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are engineered to replace discrete transistor-resistor networks. The RN1105 variant specifically provides a defined resistance ratio suitable for standard digital logic interfacing tasks where space conservation and assembly efficiency are prioritized over adjustable bias parameters.
Replacement Considerations
Consult official Toshiba cross-reference guides for verified equivalents. Potential substitutes must match the NPN polarity, 50 V rating, 100 mA current limit, and SSM package dimensions. Verify internal resistor values and hFE characteristics to ensure functional parity in the target circuit.
