RN1105,LF(CT

Overview

The RN1105,LF(CT is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors into a compact surface-mount package to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 80 at 10 mA and 5 V. Internal resistor values are specified as R1 = 2.2 kOhms and R2 = 47 kOhms. Power dissipation is rated at 150 mW with a transition frequency of 250 MHz.

Feature Summary

• Integrates dual bias resistors (R1 and R2) directly with the NPN transistor to reduce component count and assembly costs.
• Utilizes an ultra-small SOT-723 (VESM) package designed for high-density mounting applications.
• Provides complementary functionality within the RN1101MFV to RN1106MFV series, offering a wide range of resistor configurations.

Applications

• Switching circuits requiring compact form factors
• Inverter circuits for signal processing
• Interface circuits between logic levels
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix LF(CT against the manufacturer's official datasheet to confirm pinout compatibility and internal resistor values. Ensure the ordering code matches the required packaging format, such as tape and reel or cut tape, as these affect handling procedures. Cross-reference the part number with Toshiba Semiconductor and Storage documentation to validate RoHS compliance status and lead time requirements before finalizing procurement plans.

Selection Notes

Select this component when a single NPN digital transistor with a 2.2 kOhm base resistor and 47 kOhm emitter resistor is required. The 50 V rating and 100 mA current capacity suit general-purpose switching tasks. Consider the 150 mW power dissipation limit and SOT-723 package size for thermal management and board space constraints. Compare against other RN11xx variants if different resistor ratios or higher power ratings are needed.

Part Context

This part belongs to the RN110xMFV series of silicon NPN epitaxial type transistors using PCT process technology. The series includes complementary PNP counterparts in the RN210xMFV lineup. These devices are engineered to replace discrete resistor-transistor combinations, enabling more compact equipment manufacturing. The RN1105 variant specifically provides a 2.2 kOhm/47 kOhm resistor ratio optimized for specific drive conditions.

Replacement Considerations

Direct substitutes within the same family include RN1101MFV through RN1106MFV, provided the internal resistor values match the circuit requirements. Verify that alternative packages or suffixes maintain identical pin configurations and electrical characteristics before substitution.