RN1105,LXHF(CT

Overview

The RN1105,LXHF(CT is a single NPN epitaxial planar silicon pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network into the device, featuring a base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 47 kOhms. The component supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It operates within a power dissipation limit of 150 mW and maintains a minimum DC current gain (hFE) of 80 at 10 mA and 5 V. The unit is housed in a compact VESM package.

Feature Summary

• Integrates internal bias resistors to reduce external component count and simplify circuit design.
• Utilizes ultra-small VESM packaging suitable for high-density surface mount applications.
• Provides complementary pairing options with corresponding PNP devices in the same series.

Applications

• Switching circuits requiring compact form factors
• Inverter logic interfaces
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix LXHF(CT against official Toshiba documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the VESM package designation matches the target PCB footprint requirements. Cross-reference the AEC-Q101 qualification status if automotive reliability standards are mandatory for the intended deployment environment.

Selection Notes

Select this NPN variant when a low input resistance of 2.2 kOhms is required for faster switching or higher drive capability compared to higher resistance alternatives. Verify that the 150 mW power dissipation rating accommodates the thermal constraints of the application. Confirm compatibility with the complementary PNP RN2105MFV if a push-pull configuration is necessary.

Part Context

This component belongs to the RN11xx series of pre-biased transistors designed for space-constrained electronics. It serves as the NPN counterpart to the RN2105MFV PNP device, offering matched electrical characteristics for differential or complementary circuit topologies. The series emphasizes miniaturization through integrated resistor networks.

Replacement Considerations

Direct functional substitutes include other Toshiba NPN pre-biased transistors with identical 2.2 kOhm/47 kOhm resistor ratios and VESM packaging, such as the RN1105,L3F. Verify pinout compatibility and thermal performance before substituting with components from other manufacturers.