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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1105MFV,L3F is a Silicon NPN epitaxial pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors into the package to reduce component count and assembly costs. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 150 mW. The device features an internal base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 47 kOhms. It has a minimum DC current gain of 80 at 10 mA and 5 V, with a maximum collector cutoff current of 500 nA.
Feature Summary
- Incorporates built-in bias resistors to simplify circuit design and reduce part count.
- Utilizes an ultra-small VESM surface-mount package suitable for high-density mounting.
- Designed for switching, inverter, interface, and driver circuits.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN digital transistor with a low base resistance ratio is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA collector current specifications.
Part Context
This model belongs to the RN110xMFV series, which includes complementary PNP types (RN210xMFV). The series offers various resistor combinations to suit different drive requirements while maintaining a consistent physical footprint.
Replacement Considerations
Direct substitutes include other models from the RN110xMFV family with matching R1/R2 values or similar NPN digital transistors in the VESM package. Verify pinout compatibility and electrical ratings before substitution.
FAQ
What are the specific values of the integrated bias resistors?
The RN1105MFV,L3F contains a base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 47 kOhms.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter voltage (VCEO) rating is 50 V.
Is this component qualified for automotive applications?
While some RN series models hold AEC-Q101 qualification, the provided datasheet does not explicitly state that the RN1105MFV,L3F carries this certification.
