RN1105MFV,L3F(CT

Overview

The RN1105MFV,L3F is an NPN digital transistor with built-in bias resistors manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. The device includes a base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 47 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, and a maximum saturation voltage of 300 mV at 500 µA base current and 5 mA collector current. The component operates within a maximum power dissipation of 150 mW and utilizes a surface-mount SOT-723 package.

Feature Summary

• Integrates NPN bipolar junction transistor with dual internal bias resistors for simplified circuit design
• Optimized for low-voltage switching applications with defined saturation characteristics
• Utilizes compact surface-mount packaging suitable for automated assembly processes

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for small-signal logic interfaces
• Level shifting and buffer applications in embedded systems

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest documentation to confirm tape-and-reel specifications and marking codes. Confirm RoHS compliance status and AEC-Q101 qualification requirements if automotive grade performance is necessary for the target application environment.

Selection Notes

Select this component when an NPN configuration with a 2.2 kOhm base resistor and 47 kOhm emitter resistor is required. Ensure the 50 V voltage rating and 100 mA current capacity align with the load requirements. Consider the SOT-723 footprint constraints during PCB layout planning.

Part Context

This part belongs to the RN11xx series of pre-biased transistors from Toshiba. These devices combine a single NPN transistor with two resistors to reduce board space and assembly costs compared to discrete implementations. The MFV designation indicates the specific plastic encapsulation type used for this component family.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50 V rating, 100 mA current, and the specific 2.2 kOhm/47 kOhm resistor ratio. Verify pinout compatibility with the SOT-723/VESM package before substitution.