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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1105MFV,L3XHF(CT is an NPN pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN bipolar junction transistor with internal bias resistors, specifically configured with a base resistor of 2.2 kΩ and an emitter-base resistor of 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. It is qualified to the AEC-Q200 automotive standard and utilizes the SOT-723 surface-mount package.
Feature Summary
- Integrates NPN BJT with built-in bias resistors for simplified circuit design
- Automotive-grade qualification ensuring reliability in harsh environments
- Compact SOT-723 surface-mount package for space-constrained applications
Applications
- Automotive electronic control units requiring signal switching
- General-purpose digital switching in consumer electronics
- Interface circuits between microcontrollers and peripheral devices
Procurement Notes
Verify that the ordering suffix L3XHF(CT corresponds to the specific tape-and-reel packaging configuration required for automated assembly processes. Confirm AEC-Q200 qualification status is explicitly documented in the official datasheet for automotive compliance requirements. Ensure compatibility with the specified SOT-723 footprint during PCB layout validation.
Selection Notes
Select this component when an NPN digital transistor with a 2.2 kΩ base resistor and 47 kΩ emitter-base resistor is required. Consider the 50 V breakdown voltage and 100 mA current limits against circuit demands. The AEC-Q200 qualification makes it suitable for automotive applications where higher reliability standards are mandated compared to commercial grade components.
Part Context
This part belongs to the RN110x series of pre-biased transistors from Toshiba. These devices combine transistors and resistors into a single package to reduce board space and assembly costs. The RN1105 variant specifically denotes the NPN configuration with defined resistor values, distinguishing it from other variants in the family that may have different resistance ratios or PNP configurations.
Replacement Considerations
Cross-reference with RN1105MFV,L3F for identical electrical specifications but potentially different packaging formats. Verify pinout compatibility and thermal characteristics when substituting with other manufacturers' NPN digital transistors featuring similar 2.2k/47k resistor networks.
