RN1106ACT(TPL3)

Overview

The RN1106ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with two internal bias resistors in a single surface-mount package. This configuration simplifies circuit design by reducing component count and board space while ensuring stable switching performance. The device is designed for low-voltage digital applications, offering high current gain and fast switching speeds suitable for interface and driver circuits.

Feature Summary

• Integrates NPN transistor with dual bias resistors to simplify circuit layout
• Provides stable switching characteristics with reduced external component requirements
• Optimized for low-voltage digital logic interface applications

Applications

• Digital logic level shifting and interface circuits
• Driver circuits for low-power loads
• Switching applications in consumer electronics

Procurement Notes

Verify the specific suffix TPL3 against the official Toshiba datasheet to confirm packaging type and reel specifications. Ensure compatibility with automated placement equipment. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before procurement.

Selection Notes

Select this component when a compact solution for NPN switching with integrated base biasing is required. Compare internal resistor values and transistor current ratings against application requirements. Consider thermal dissipation capabilities within the chosen package format during the design phase.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices are widely used to replace discrete transistor-resistor combinations. The series offers various configurations including single and dual transistor options with different resistor ratios.

Replacement Considerations

Check for equivalent BRTs from other manufacturers such as ROHM or onsemi. Verify pinout compatibility and electrical parameters like Vceo and R1/R2 values before substitution.