RN1106,LF(CT

Overview

The RN1106,LF(CT is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network within a compact surface-mount package to simplify circuit design. The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a maximum saturation voltage of 300mV at specified base and collector currents. The unit features a transition frequency of 250MHz and a power dissipation rating of 100mW. Internal resistors consist of a 4.7kΩ base resistor (R1) and a 47kΩ emitter resistor (R2).

Feature Summary

• Integrated bias resistor network reduces component count and simplifies PCB layout.
• High-speed switching capability supported by a 250MHz transition frequency.
• Low saturation voltage ensures efficient signal switching performance.
• Compact surface-mount packaging facilitates automated assembly.

Applications

• Switching circuits for digital logic interfaces.
• Inverter applications in consumer electronics.
• Driver circuits for low-power loads.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact tape-and-reel configuration or cut-tape variant required. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to ensure compatibility with assembly processes.

Selection Notes

Select this component when a single NPN pre-biased transistor with integrated 4.7kΩ base and 47kΩ emitter resistors is required. Ensure the 50V voltage rating and 100mA current capacity align with the target circuit specifications. Verify that the US6 package dimensions fit the available board space constraints.

Part Context

This part belongs to the Toshiba RN series of digital transistors, which are designed to replace discrete resistor-transistor combinations. The RN1106 specifically provides an NPN configuration with dual internal resistors, offering a compact solution for general-purpose switching and interface tasks in portable devices.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic equivalents may differ in internal resistance values or hFE characteristics. Validate pinout compatibility and thermal performance before substitution.