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The RN1106,LXHF(CT is a single NPN digital transistor from Toshiba, designed for automotive applications with AEC-Q101 qualification. It features an integrated biasing network with Q1BSR at 4.7 kOhms and Q1BER at 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 100 mW, with a maximum operating temperature of +150°C. The component utilizes the SSM-3 (SOT-416) surface-mount package and offers a maximum operating frequency of 250 MHz.
Verify that the specific ordering suffix matches the required resistance values and package type. Confirm AEC-Q101 certification status if automotive compliance is mandatory. Ensure the supplier provides valid RoHS documentation. Cross-reference the manufacturer part number with official Toshiba datasheets to confirm pinout compatibility. Validate thermal performance requirements against the 100 mW power dissipation limit.
Select this component when a single NPN digital transistor with a 4.7 kOhm base series resistor is required. It is suitable for applications needing 50 V blocking voltage and 100 mA current handling. Consider the SSM-3 package size for PCB layout constraints. Verify that the 250 MHz frequency response meets the system switching speed requirements.
This part belongs to Toshiba's RN series of pre-biased bipolar transistors. These devices integrate resistors directly onto the silicon die to reduce external component count. The RN1106 variant specifically targets single NPN configurations with defined input resistance ratios for standardized logic interfacing.
Check Toshiba's official cross-reference lists for direct equivalents. Verify pinout and electrical parameters match exactly before substitution. Generic replacements may lack AEC-Q101 certification or identical internal resistor tolerances.