RN1106MFV,L3F

Overview

The RN1106MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal resistors R1 and R2 within an SOT-723 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a maximum power dissipation of 150 mW. Internal resistance values are specified as R1 at 4.7 kOhms and R2 at 47 kOhms. The component meets AEC-Q101 automotive qualification standards and offers a DC current gain (hFE) minimum of 80 at 10 mA and 5 V.

Feature Summary

• Integrates dual bias resistors to simplify circuit design and reduce component count.
• Automotive-grade reliability compliant with AEC-Q101 standards for harsh environments.
• Compact SOT-723 surface-mount packaging suitable for space-constrained applications.

Applications

• Switching circuits in automotive electronic control units.
• Interface connections between microcontrollers and peripheral devices.
• Driver circuits for low-power loads in industrial systems.

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel specifications and marking codes. Confirm AEC-Q101 compliance requirements with the supplier if automotive qualification is mandatory for the end application. Check for obsolescence status as part numbers may transition out of active production.

Selection Notes

Select this model when a fixed base-to-emitter resistance ratio is required for stable switching characteristics. The 4.7 kOhm input resistor suits moderate drive currents, while the 47 kOhm emitter resistor aids in leakage suppression. Ensure the 150 mW power dissipation limit accommodates the thermal conditions of the target PCB layout.

Part Context

This component belongs to the RN11xx series of digital transistors from Toshiba. It shares the SOT-723 form factor with variants like RN1104 and RN1105 but differs in internal resistor ratios. The series is designed to replace discrete BJT and resistor combinations, offering consistent electrical performance across manufacturing batches.

Replacement Considerations

Direct substitutes include other RN1106 variants from different manufacturers or Toshiba's RN1106 without the L3F suffix if packaging differences are acceptable. Verify pinout compatibility and hFE ranges before substitution.