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The RN1106MFV,L3XHF(CT is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 150 mW. It is housed in a compact VESM-3 surface-mount package, which corresponds to the SOT-723 footprint. The component is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q101 qualification status aligns with the intended application requirements. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before finalizing procurement orders.
Select this component when a compact NPN switching solution with integrated biasing is required for space-constrained designs. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the thermal performance within the VESM package for the expected power dissipation levels in the target application environment.
This part belongs to Toshiba's series of bias resistor built-in transistors designed for digital switching applications. The VESM package offers a small form factor suitable for high-density PCB layouts. As an automotive-qualified device, it supports robust operation in demanding environments typical of modern vehicle electronics architectures.
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official cross-reference guides or authorized distributor databases for verified equivalent components.