RN1106MFV(TL3,T)

$0.17

Description：TRANS PREBIAS NPN 50V 0.1A VESM
Series：-

SKU:39a222794269 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A VESM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：150 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-723
Supplier Device Package：VESM

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RN1106MFV(TL3,T)

Overview

The RN1106MFV(TL3,T) is a Silicon NPN epitaxial type transistor featuring an integrated bias resistor, manufactured using Toshiba's PCT process. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device incorporates a base resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 47 kΩ. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 10 mA and VCE = 5 V, and a maximum collector-emitter saturation voltage of 0.3 V at IC = 5 mA and IB = 0.5 mA. Power dissipation is rated at 150 mW.

Feature Summary

Incorporates internal bias resistors to reduce component count and assembly costs
Ultra-small package designed for high-density mounting applications
Complementary configuration available within the RN210xMFV series

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify the specific ordering suffix TL3 against official manufacturer documentation to confirm tape and reel specifications. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes before finalizing procurement plans.

Selection Notes

Select this model when a 4.7 kΩ base resistor and 47 kΩ emitter-base resistor are required for NPN switching applications. Ensure the design accommodates the 150 mW power dissipation limit and verify that the 50 V collector-emitter breakdown voltage meets the circuit requirements.

Part Context

This component belongs to the RN1101MFV through RN1106MFV family of bias resistor built-in transistors. Each variant in the series offers distinct resistor ratios while sharing identical electrical ratings and physical packaging dimensions.