RN1107ACT(TPL3)

RN1107ACT(TPL3)

$0.26
  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-

SKU:d9c400d6a91b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

Download product information

RN1107ACT(TPL3)

Overview

The RN1107ACT(TPL3) is a silicon NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a DC current gain (hFE) minimum of 50 at Ic=10mA, Vce=5V. The saturation voltage (Vce(sat)) is typically 300 mV max at Ib=250µA, Ic=5mA. It features built-in base resistor R1 and emitter resistor R2, with a transition frequency (fT) of 200 MHz and power dissipation of 100 mW.

Feature Summary

  • Integrates bias resistors to reduce component count and simplify circuit layout
  • Designed for switching, inverter, interface, and driver applications
  • Utilizes PCT process for high reliability and low noise performance

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS3 standards if required. Cross-reference part numbers carefully as minor suffix variations may indicate different packaging or environmental compliance levels.

Selection Notes

Select this component when an NPN digital transistor with 50V Vceo and 100mA Ic is required. Verify that the integrated resistor values match the target biasing requirements. Consider the SC-70 package size for space-constrained designs. Compare hFE and Vce(sat) specs against load conditions to ensure adequate drive capability.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRT). These devices combine bipolar transistors with internal resistors to replace discrete resistor-transistor networks. The RN1107 variant specifically offers NPN polarity with standard resistor ratios suitable for general-purpose logic interfacing and signal switching tasks.

Replacement Considerations

Check for direct equivalents such as RN1107LF or other RN110x variants with identical pinouts and electrical characteristics. Verify resistor ratios and hFE ranges before substitution. Alternative manufacturers offer similar BRTs but require careful parameter matching for Vceo, Ic, and fT.

RN1107ACT(TPL3)RN1107ACT(TPL3)
$0.26
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