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The RN1107ACT(TPL3) is a silicon NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a DC current gain (hFE) minimum of 50 at Ic=10mA, Vce=5V. The saturation voltage (Vce(sat)) is typically 300 mV max at Ib=250µA, Ic=5mA. It features built-in base resistor R1 and emitter resistor R2, with a transition frequency (fT) of 200 MHz and power dissipation of 100 mW.
Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS3 standards if required. Cross-reference part numbers carefully as minor suffix variations may indicate different packaging or environmental compliance levels.
Select this component when an NPN digital transistor with 50V Vceo and 100mA Ic is required. Verify that the integrated resistor values match the target biasing requirements. Consider the SC-70 package size for space-constrained designs. Compare hFE and Vce(sat) specs against load conditions to ensure adequate drive capability.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRT). These devices combine bipolar transistors with internal resistors to replace discrete resistor-transistor networks. The RN1107 variant specifically offers NPN polarity with standard resistor ratios suitable for general-purpose logic interfacing and signal switching tasks.
Check for direct equivalents such as RN1107LF or other RN110x variants with identical pinouts and electrical characteristics. Verify resistor ratios and hFE ranges before substitution. Alternative manufacturers offer similar BRTs but require careful parameter matching for Vceo, Ic, and fT.