RN1107,LF(CT

Description：TRANS PREBIAS NPN 50V 0.1A SSM
Series：-

SKU:dba77eb53af3 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A SSM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：10 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SSM

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RN1107,LF(CT

Overview

The RN1107,LF(CT is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network within an SSM (SC-75/SOT-416) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 47 kOhms. DC current gain is specified at a minimum of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under standard test conditions.

Feature Summary

Integrates dual bias resistors to simplify circuit design and reduce component count
Utilizes ultra-small SSM packaging for high-density mounting applications
Provides complementary configuration to the RN2107 PNP series

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly line standards.

Selection Notes

Select this component when a compact NPN digital transistor with a 10 kOhm base resistance is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current threshold. Verify that the 250 MHz transition frequency meets the switching speed requirements of the target circuit design.

Part Context

This part belongs to the RN11xx series of NPN pre-biased transistors from Toshiba. These devices are designed as direct replacements for discrete resistor-transistor networks, offering space savings in portable electronics and computer peripheral interfaces where board real estate is constrained.