RN1107,LXHF(CT

Overview

The RN1107,LXHF(CT is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage, designed for automotive applications under the AEC-Q101 qualification standard. It integrates a single PNP transistor with built-in bias resistors in an SSM (SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The typical base resistor (R1) is 4.7 kOhms, and the emitter-base resistor (R2) is 10 kOhms. The device features a minimum DC current gain (hFE) of 50 at IC = -10 mA and VCE = -5 V, with a transition frequency (fT) of 200 MHz and a maximum operating temperature of +150°C.

Feature Summary

• Integrates a PNP transistor with dual internal bias resistors to simplify circuit design and reduce component count.
• Qualified for automotive use according to AEC-Q101 standards, ensuring reliability in demanding environments.
• Optimized for high-speed switching applications with a transition frequency of 200 MHz.

Applications

• Switching circuits in automotive electronic control units.
• Inverter circuits for motor control or power management.
• Interface circuits for signal level translation between microcontrollers and peripherals.
• Driver circuits for low-power loads such as LEDs or relays.

Procurement Notes

Verify the specific suffix LXHF(CT) against the manufacturer's latest datasheet to confirm packaging details and RoHS compliance status. Ensure that the AEC-Q101 qualification is required for the target application, as this indicates automotive-grade reliability. Cross-reference the part number with authorized distributors to confirm availability and lead times, as automotive components may have longer supply cycles than commercial grades.

Selection Notes

Select this component when a PNP configuration with integrated biasing is needed for space-constrained designs. The 4.7 kOhm base resistor value suits applications requiring moderate drive currents. Compare the 100 mA collector current limit against the load requirements. Consider the SSM package size if board real estate is limited. Verify that the -50 V voltage rating exceeds the maximum circuit voltage spikes.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRTs). The RN1107 specifically denotes a single PNP unit with R1=4.7kΩ and R2=10kΩ. It is complementary to NPN counterparts like the RN1007. The LXHF(CT) suffix typically indicates tape-and-reel packaging for automated assembly, common in high-volume manufacturing.

Replacement Considerations

Direct replacements must match the PNP polarity, -50V VCEO, and similar resistor values. Check equivalent parts from other manufacturers offering AEC-Q101 qualified BRTs in SSM packages. Verify pinout compatibility to ensure direct substitution without PCB redesign. Confirm thermal performance matches the original 100mW dissipation rating.