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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1107MFV,L3F is a single NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with internal bias resistors in a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation (Pd) of 150 mW. The device features a typical base resistor (R1) value of 4.7 kOhms and an emitter-base resistor (R2) of 47 kOhms. It has a minimum DC current gain (hFE) of 80 at Ic=10mA and Vce=5V. The component is qualified under AEC-Q101 standards for automotive applications and supports a maximum operating temperature of +150°C.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to simplify circuit design
- Compact SOT-723 surface-mount package for space-constrained applications
- AEC-Q101 qualified for automotive reliability requirements
- High thermal stability with maximum junction temperature up to +150°C
Applications
- Automotive electronic control units requiring AEC-Q101 compliance
- General-purpose switching circuits in consumer electronics
- Level shifting and driver circuits for logic interfaces
- Biasing networks for small-signal amplification stages
Procurement Notes
Verify the specific suffix L3F against official Toshiba documentation to confirm tape-and-reel packaging configuration and lead-free status. Confirm AEC-Q101 qualification details directly from the manufacturer's datasheet or quality certification documents before integrating into automotive designs. Ensure the ordering part number matches the exact resistor ratio and package variant required for the target application.
Selection Notes
Select this component when a single NPN BRT with a 4.7k Ohm base resistor is required in a SOT-723 package. Compare the 4.7k/47k resistor ratio against other RN11xx series variants if different input impedance characteristics are needed. Verify that the 100 mA collector current and 50 V voltage ratings exceed the maximum load conditions of the intended switching application.
Part Context
The RN1107MFV belongs to Toshiba's RN11xx series of Bias Resistor Built-in Transistors. This series provides integrated solutions combining transistors with pre-calculated bias resistors, reducing external component count. The MFV suffix typically denotes the SOT-723 package type, while L3F indicates specific handling and environmental compliance attributes defined by the manufacturer.
Replacement Considerations
Direct substitutes within the same family include RN1106MFV,L3F (10k Ohm R1) and RN1108MFV,L3F (1k Ohm R1), provided the resistor ratio difference is acceptable. Cross-manufacturer equivalents should be verified for pin compatibility, hFE characteristics, and package dimensions.
