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The RN1107MFV,L3XHF(CT is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN single configuration housed in a compact SOT-723-3 surface-mount package. The device integrates internal bias resistors, with a typical input resistance of 4.7 kOhms. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. It meets AEC-Q101 automotive qualification standards and supports operating temperatures up to +150°C.
Verify the exact suffix designation during procurement, as variations such as L3F or L3X may indicate specific tape-and-reel packaging configurations or regional distribution channels. Confirm that the component matches the required AEC-Q101 qualification if used in automotive systems. Ensure the ordering quantity aligns with standard reel sizes provided by authorized distributors to avoid partial reel handling issues.
Select this component when a single NPN digital transistor with approximately 4.7 kOhm base resistance is required. Compare against similar RN11xx series parts if different resistor ratios are needed. Verify that the 50 V VCEO and 100 mA Ic ratings exceed the maximum circuit demands. Consider the SOT-723 footprint compatibility with existing PCB layouts before finalizing the selection.
This part belongs to Toshiba's RN11xx series of Bias Resistor Built-in Transistors. These components replace discrete resistor-transistor networks, reducing board space and assembly costs. The RN1107 variant specifically provides a 4.7 kOhm input resistance, distinguishing it from other series members with different resistance values like 1 kOhm or 10 kOhm.
Direct substitutes within the same family include RN1107MFV,L3F. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter matching, particularly VCEO and hFE characteristics.