RN1107MFV,L3XHF(CT

RN1107MFV,L3XHF(CT

$0.22
  • Description:TRANS PREBIAS NPN 50V 0.1A VESM
  • Series:-

SKU:a30302598635 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:150 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN1107MFV,L3XHF(CT

Overview

The RN1107MFV,L3XHF(CT is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN single configuration housed in a compact SOT-723-3 surface-mount package. The device integrates internal bias resistors, with a typical input resistance of 4.7 kOhms. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. It meets AEC-Q101 automotive qualification standards and supports operating temperatures up to +150°C.

Feature Summary

  • Integrates NPN transistor with built-in bias resistors for simplified circuit design
  • Automotive-grade reliability compliant with AEC-Q101 standards
  • Compact SOT-723-3 surface-mount package for space-constrained applications

Applications

  • Switching circuits in automotive electronic control units
  • Interface connections between microcontrollers and peripheral devices
  • Driver circuits for low-power loads

Procurement Notes

Verify the exact suffix designation during procurement, as variations such as L3F or L3X may indicate specific tape-and-reel packaging configurations or regional distribution channels. Confirm that the component matches the required AEC-Q101 qualification if used in automotive systems. Ensure the ordering quantity aligns with standard reel sizes provided by authorized distributors to avoid partial reel handling issues.

Selection Notes

Select this component when a single NPN digital transistor with approximately 4.7 kOhm base resistance is required. Compare against similar RN11xx series parts if different resistor ratios are needed. Verify that the 50 V VCEO and 100 mA Ic ratings exceed the maximum circuit demands. Consider the SOT-723 footprint compatibility with existing PCB layouts before finalizing the selection.

Part Context

This part belongs to Toshiba's RN11xx series of Bias Resistor Built-in Transistors. These components replace discrete resistor-transistor networks, reducing board space and assembly costs. The RN1107 variant specifically provides a 4.7 kOhm input resistance, distinguishing it from other series members with different resistance values like 1 kOhm or 10 kOhm.

Replacement Considerations

Direct substitutes within the same family include RN1107MFV,L3F. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter matching, particularly VCEO and hFE characteristics.

RN1107MFV,L3XHF(CTRN1107MFV,L3XHF(CT
$0.22
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