RN1108ACT(TPL3)

Overview

The RN1108ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with a single base resistor (R1) in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V, a continuous collector current rating of 100mA, and a maximum power dissipation of 100mW. The integrated base resistor has a typical value of 10kΩ. Designed for low-power switching applications, it operates within a temperature range of -40°C to +125°C and utilizes the SSM-6SC package.

Feature Summary

• Integrates an NPN transistor with a built-in base resistor to simplify circuit design and reduce component count.
• Optimized for high-speed switching operations with a transition frequency of 250MHz.
• Provides enhanced thermal stability and consistent electrical characteristics due to monolithic integration.

Applications

• Interface circuits between microcontrollers and peripheral devices.
• Driver circuits for small-signal loads and logic level translation.
• Switching applications in consumer electronics and industrial control systems.

Procurement Notes

Verify the specific suffix TPL3 against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the full part number with authorized distributors to confirm current availability status and lead times, as supply chain conditions may vary.

Selection Notes

Select this component when a compact solution for NPN switching with integrated biasing is required. The 10kΩ base resistor suits standard logic levels. Verify that the 100mA collector current and 50V breakdown voltage meet the load requirements. Consider the SSM-6SC package dimensions for PCB layout constraints compared to alternative BRT packages.

Part Context

The RN1108 series belongs to Toshiba's family of Bias Resistor Built-in Transistors designed to replace discrete transistor-resistor combinations. These devices are engineered to minimize board space and assembly costs while maintaining reliable performance in digital switching environments. The ACT variant typically denotes specific electrical tolerances or packaging configurations within the broader RN110x product line.

Replacement Considerations

Potential substitutes include other NPN BRTs with similar 50V/100mA ratings and ~10kΩ base resistance, such as those from onsemi or Rohm. Verify pinout compatibility and thermal characteristics before substitution. Check datasheets for matching transition frequencies and saturation voltages to ensure functional equivalence in the specific circuit topology.