RN1108,LF(CT

Overview

The RN1108,LF(CT is a dual pre-biased NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors within an SM6 (SC-74/SOT-457) surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Key electrical parameters include a DC current gain (hFE) of at least 80 at 10mA/5V, a saturation voltage of 300mV max at 250µA/5mA, and a transition frequency of 250MHz. Internal resistors are configured as R1=22kΩ and R2=47kΩ, with a total power dissipation rating of 300mW.

Feature Summary

• Integrates dual NPN transistors with fixed bias resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for efficient signal handling
• Utilizes compact surface-mount packaging for automated assembly

Applications

• Switching circuits in digital logic interfaces
• Inverter circuits for signal processing
• Driver circuits for small-signal loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and resistor values. Ensure the component meets RoHS compliance requirements for your target market. Confirm availability through authorized distributors, as standard lead times may vary based on production schedules and regional supply constraints.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce board space and part count. Compare internal resistor values (R1/R2) against the target base drive requirements. Verify that the 50V voltage rating and 100mA current capacity exceed the maximum operational stresses of the application circuit.

Part Context

This part belongs to the Toshiba RN series of Bias Resistor Built-In Transistors (BRBTs). These devices combine single or dual transistors with resistors to replace multiple discrete components. The RN1108 specifically provides a dual NPN solution, contrasting with complementary PNP/NPN pairs or single-transistor variants in the same family.

Replacement Considerations

Consult the official RN1608 datasheet for potential functional equivalents within the Toshiba portfolio. Verify pin-to-pin compatibility and electrical parameter alignment before substituting with other manufacturers' dual NPN pre-biased arrays.