RN1108,LXHF(CT

RN1108,LXHF(CT

$0.26
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:fd5700cc8cc1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1108,LXHF(CT

Overview

The RN1108,LXHF(CT is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with built-in bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Typical internal resistor values are R1 = 47 kOhms and R2 = 47 kOhms, resulting in a resistor ratio of 1.0. Key electrical parameters include a minimum DC current gain (hFE) of 80 at IC=10mA, VCE=5V, and a transition frequency (fT) ranging from 200 MHz to 250 MHz. The component is housed in a US6 (SOT-363) surface-mount package with a maximum power dissipation of 200 mW and an operating temperature range up to +150°C.

Feature Summary

  • Integrates NPN transistor with dual bias resistors for simplified circuit design
  • Optimized for switching, inverter, interface, and driver applications
  • Complementary pairing available with the RN2108 series

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix against the official Toshiba datasheet to confirm pinout orientation and resistor tolerance specifications. Ensure the ordering code matches the required packaging format, such as cut tape or reel quantities. Cross-reference the AEC-Q101 qualification status if automotive reliability standards are mandatory for the target application environment.

Selection Notes

Select this component when a compact NPN solution with fixed bias ratios is required. Verify that the 47k/47k resistor configuration aligns with the driving source impedance. Confirm that the US6 package dimensions fit the PCB layout constraints. Check thermal requirements against the 200mW power dissipation limit under expected load conditions.

Part Context

This part belongs to the Toshiba RN11xx series of pre-biased transistors. These devices combine a single NPN transistor with two internal resistors to reduce component count and assembly costs. The RN1108 specifically provides a symmetric 1:1 resistor ratio, distinguishing it from other variants in the family that offer different bias configurations for specialized logic or amplification tasks.

Replacement Considerations

The RN2108,LXHF(CT serves as the complementary PNP counterpart within the same product family. Direct substitution with non-Toshiba equivalents requires careful verification of hFE, fT, and internal resistor tolerances to ensure circuit stability.

RN1108,LXHF(CTRN1108,LXHF(CT
$0.26
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