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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1108MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an epitaxial planar silicon transistor with internal bias resistors in a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a typical base resistor value of 47 kOhms and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates a single NPN transistor with built-in bias resistors to reduce component count and simplify circuit design.
- Utilizes a small SOT-723 surface-mount package suitable for high-density mounting applications.
- Qualified under AEC-Q101 automotive reliability standards for robust performance.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm packaging details and availability status. Ensure the ordering part number matches the required resistor values and package type for your design. Confirm RoHS compliance and automotive qualification requirements before finalizing procurement decisions.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The 47 kOhm base resistor value suits general-purpose interface applications. Consider the 50 V voltage rating and 100 mA current capacity to ensure adequate headroom for the target load conditions.
Part Context
This part belongs to the RN11xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor combinations, offering space savings and reduced assembly costs. The series includes complementary PNP variants and various resistor configurations for diverse circuit needs.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers within the same family or equivalent cross-reference models. Verify pinout compatibility and electrical parameter alignment before substituting.
