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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1108(T5L,F,T) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It integrates two bias resistors to simplify circuit design. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 100 mW. The built-in resistor R1 is 22 kΩ and R2 is 47 kΩ, yielding a ratio of approximately 0.468. It operates within a junction temperature range up to 150 °C and offers a transition frequency of 250 MHz.
Feature Summary
- Integrates built-in bias resistors to reduce component count
- Simplifies circuit design and manufacturing processes
- Complementary configuration available with RN2108
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure storage conditions adhere to the specified temperature ranges to maintain component integrity.
Selection Notes
Select this component for applications requiring integrated biasing in small signal switching roles. Verify that the required base resistance values align with the fixed 22 kΩ and 47 kΩ internal resistors. Ensure the operating environment remains within the specified thermal limits to prevent reliability degradation.
Part Context
This part belongs to the RN1107-1109 series of pre-biased transistors. These devices utilize Toshiba's PCT process technology. They are designed as compact solutions for high-density mounting, offering a direct replacement for discrete resistor-transistor networks in space-constrained designs.
Replacement Considerations
RN1107 and RN1109 share identical packages but differ in internal resistor values. Cross-reference external resistor requirements when substituting. No other direct substitutes are confirmed in the provided datasheet.
