RN1109ACT(TPL3)

Overview

The RN1109ACT(TPL3) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with two internal bias resistors into a single surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. Internal resistor values are typically 10 kΩ for the base resistor (R1) and 10 kΩ for the emitter resistor (R2). The component operates within a temperature range of -55°C to +150°C and is housed in an SOT-323 (SC-70) package.

Feature Summary

• Integrates an NPN transistor with dual bias resistors to reduce external component count
• Designed for compact circuit layouts through miniaturized surface-mount packaging
• Optimized for low saturation voltage and high-speed switching performance

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pin configuration, resistance tolerance, and tape-and-reel specifications. Ensure the requested part matches the required electrical characteristics and RoHS compliance status for the target application environment.

Selection Notes

Select this component when space constraints require integrating biasing networks directly with the switching element. Verify that the 10kΩ/10kΩ internal resistor ratio aligns with the logic drive requirements and that the 50V rating exceeds the maximum circuit voltage under all operating conditions.

Part Context

This model belongs to the RN11xx series of pre-biased transistors from Toshiba. These devices are engineered to simplify digital logic interfacing by eliminating external base resistors. The ACT designation typically indicates specific manufacturing lot or packaging variations within the standard SC-70 form factor used for general-purpose signal processing.

Replacement Considerations

Cross-reference with other BRT manufacturers such as ON Semiconductor or Diodes Inc. Ensure equivalent NPN polarity, matching Vceo and Ic ratings, and similar R1/R2 ratios to maintain circuit timing and drive levels without modification.