RN1109,LF(CT

Overview

The RN1109,LF(CT is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with a base resistor (R1) of 47 kOhms within a compact S-Mini (SOT-23-3) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 10 mA and 5 V, a transition frequency of 250 MHz, and a maximum power dissipation of 200 mW. It operates within a temperature range of -40°C to 85°C.

Feature Summary

• Integrates an NPN transistor with a 47 kOhm base resistor for simplified circuit design
• Provides high-speed switching capability with a 250 MHz transition frequency
• Offers robust protection with low saturation voltage and defined current limits

Applications

• General-purpose switching applications in consumer electronics
• Driver circuits for small-signal loads requiring digital control
• Level shifting and logic interface circuits in embedded systems

Procurement Notes

Verify the specific suffix configuration when sourcing, as packaging variants such as cut tape or reel may affect handling procedures. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before finalizing procurement. Ensure the supplier provides authentic Toshiba Semiconductor and Storage components to guarantee performance reliability.

Selection Notes

Select this component when a compact NPN switch with integrated biasing is required. The 47 kOhm internal resistor simplifies drive circuitry compared to discrete transistors. Consider the S-Mini package size constraints and the 200 mW power dissipation limit relative to the expected load current and ambient operating conditions during thermal analysis.

Part Context

This part belongs to Toshiba's RN series of pre-biased digital transistors, which combine BJTs with internal resistors to reduce board space and assembly complexity. The RN1109 specifically utilizes an NPN configuration with a single base resistor, distinguishing it from dual-transistor arrays or complementary pairs found in other series members.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with equivalent NPN pre-biased transistors requires verifying pinout compatibility, resistor values, and electrical ratings against the original specification.