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The RN1109,LXHF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in a compact surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Each transistor features a base resistor (R1) of 47kΩ and an emitter-base resistor (R2) of 22kΩ. The unit offers a DC current gain (hFE) minimum of 70 at 10mA and 5V, with a transition frequency of 200MHz. Power dissipation is rated at 100mW, and the component meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and resistance values. Ensure the procurement source provides valid traceability documentation for automotive-grade components. Confirm RoHS3 compliance status directly from the supplier's certificate of conformity prior to finalizing orders.
Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Verify that the 47kΩ base resistance aligns with the target drive current requirements. Ensure the 100mW power dissipation rating accommodates the thermal conditions of the intended PCB layout.
This part belongs to the RN11xx series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly time. The LXHF(CT) suffix indicates specific packaging and environmental compliance attributes defined by the manufacturer.
Direct substitutes must match the dual NPN configuration, 50V VCEO, 100mA IC, and identical R1/R2 resistor values. Verify package compatibility with SOT-363 or equivalent footprints. Cross-reference AEC-Q101 certification if automotive usage is required.