RN1109MFV,L3F

Overview

The RN1109MFV,L3F is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN single transistor configuration housed in a compact SOT-723-3 surface-mount package. The device integrates internal bias resistors, with a typical base resistor value of 4.7 kOhms. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. It meets AEC-Q101 automotive qualification standards and supports operating temperatures up to +150 C.

Feature Summary

• Integrates NPN bipolar junction transistor with built-in bias resistors for simplified circuit design
• Automotive-grade reliability certified under AEC-Q101 standards
• Compact SOT-723-3 surface-mount package optimized for space-constrained applications

Applications

• Switching circuits in automotive electronic control units
• Inverter driver circuits requiring pre-biased switching elements
• Interface connection buffers between logic levels
• General-purpose small signal amplification and switching

Procurement Notes

Verify the specific suffix L3F against the manufacturer's official datasheet to confirm tape-and-reel packaging details and binning codes. Ensure compatibility with RoHS3 directives and confirm AEC-Q101 qualification status for automotive deployment. Cross-reference the Mouser part number 757-RN1109MFVL3F for accurate distributor identification and lead time assessment prior to ordering.

Selection Notes

Select this component when a single NPN BRT with approximately 4.7 kOhm base resistance is required. Compare against the RN110x series variants to ensure the integrated resistor ratios match the specific drive requirements. Verify that the 50 V VCEO and 100 mA Ic ratings exceed the maximum circuit loads. Confirm SOT-723-3 footprint compatibility with the target PCB layout constraints.

Part Context

This part belongs to the RN1109MFV series of Bias Resistor Built-in Transistors from Toshiba. These devices combine an NPN transistor with internal bias resistors to reduce external component count. The series is designed for high-density mounting in modern electronics, offering consistent performance across temperature ranges while maintaining automotive-grade durability through AEC-Q101 certification.

Replacement Considerations

Direct substitutes within the same family include RN1108MFV,L3F and RN1110MFV,L3F, provided their respective internal resistor values align with the circuit design requirements. Verify pinout compatibility and thermal characteristics before substitution.