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The RN1109(T5L,F,T) is a Silicon NPN Epitaxial Type transistor manufactured by Toshiba Semiconductor and Storage using the PCT Process. It features built-in bias resistors to simplify circuit design. The device has a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 100 mW. The internal resistor R1 is 47 kΩ and R2 is 22 kΩ. The DC current gain (hFE) ranges from 70 to 80 at IC=10mA, VCE=5V. The transition frequency is 250 MHz.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure compliance with RoHS directives and environmental regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to ensure long-term reliability in the target application environment.
Select this component when a compact NPN pre-biased transistor is required for switching or driver applications. The integrated resistor network eliminates external components, reducing board space and assembly costs. Verify that the 50V rating and 100mA current capacity meet the system requirements. Consider the complementary RN2109 for PNP applications if a full bridge or push-pull configuration is needed.
This part belongs to the RN1107-1109 series of NPN epitaxial transistors with built-in bias resistors. These devices are designed to replace discrete transistor and resistor combinations, offering a standardized solution for general-purpose switching and logic interface tasks. The series utilizes Toshiba's PCT process technology for consistent performance.
Direct functional equivalents include other NPN digital transistors with similar 50V ratings and comparable resistor ratios (R1/R2 ≈ 2.14). Verify pinout compatibility and thermal characteristics when substituting.