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The RN1110ACT(TPL3) is a single NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors within a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current rating of 100 mA, and a maximum power dissipation of 150 mW. The device features a DC current gain (hFE) of at least 120 when tested at 1 mA collector current and 5 V collector-emitter voltage. It operates reliably across a temperature range from -40°C to +150°C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix TPL3 against the official Toshiba datasheet to confirm pinout compatibility and tape-and-reel specifications. Confirm that the AEC-Q101 qualification status remains active for this specific marking code before finalizing procurement plans.
Select this component when a single NPN BRT with 50V rating and 100mA capacity is required for automotive applications. Ensure the integrated resistor values match the design requirements, as they are fixed within the package. Compare thermal performance against alternative packages if high power density is critical.
This part belongs to the RN1110 series of Bias Resistor Built-in Transistors. The series offers various configurations including different resistor values and packaging options like SOT-323 and SC-70. The ACT variant specifically denotes the package type and terminal finish associated with the TPL3 ordering code.
Publicly confirmed substitute part numbers for RN1110ACT(TPL3) were not found in the provided source material. Consult manufacturer cross-reference lists for equivalent NPN BRTs with matching 50V/100mA ratings and AEC-Q101 certification.