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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1110,LF(CT is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial silicon transistor with a built-in bias resistor (R1) of 10 kOhms within a compact SSM surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, a maximum saturation voltage of 300 mV at specific test conditions, and a transition frequency of 250 MHz. The component operates within a temperature range of -40°C to 85°C and has a maximum power dissipation of 100 mW.
Feature Summary
- Integrates a single NPN transistor with a fixed base bias resistor to simplify circuit design and reduce component count.
- Features a high transition frequency suitable for switching and inverter applications.
- Utilizes a small surface-mount package optimized for high-density mounting on printed circuit boards.
Applications
- Switching circuits requiring simplified drive interfaces
- Inverter circuits for logic level translation
- Interface circuits connecting microcontrollers to peripheral devices
- Driver circuits for low-power loads
Procurement Notes
Verify the complete part number including the ordering suffix against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and specifications. Confirm that the requested variant matches the required bias resistor value and package type before finalizing procurement orders.
Selection Notes
Select this component when a single NPN switch with integrated biasing is required. Ensure the 10 kOhm internal resistor aligns with the driving source impedance. Verify that the 50 V voltage rating and 100 mA current capacity exceed the application's peak requirements.
Part Context
This device belongs to the RN series of bias resistor built-in transistors from Toshiba. These components are designed to replace discrete transistor-resistor combinations, offering space savings and reduced assembly costs. The RN1110 specifically provides an NPN configuration with a 10 kOhm base resistor.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided reference data. Cross-referencing requires matching the NPN polarity, 10 kOhm bias resistance, 50 V rating, and SSM package dimensions with alternative manufacturers' offerings.
FAQ
What is the value of the built-in bias resistor?
The RN1110,LF(CT includes a single built-in base resistor (R1) with a nominal value of 10 kOhms.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter voltage (VCEO) for this device is 50 V.
Does this component include an emitter-base resistor?
No, the RN1110 configuration includes only the base resistor (R1). It does not incorporate an emitter-base resistor (R2).
